On the hole injection for III-nitride based deep ultraviolet light-emitting diodes

Luping Li, Yonghui Zhang, Shu Xu, Wengang Bi, Zi Hui Zhang*, Hao-Chung Kuo

*此作品的通信作者

研究成果: Review article同行評審

38 引文 斯高帕斯(Scopus)

摘要

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

原文English
文章編號1221
頁(從 - 到)1-17
頁數17
期刊Materials
10
發行號10
DOIs
出版狀態Published - 24 10月 2017

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