摘要
In this work, the geometry effects on the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si0.7Ge0.3 matrix fabricated by neutral beam etching are studied. We formulate and solve the Schrodinger equation with an effective mass approach in k space. The radius, separation, and shape effects on the energy band and density of states of the explored NPs are calculated and discussed. The separation of NPs plays a crucial factor to manipulate the band structure among the aforementioned factors.
原文 | English |
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文章編號 | SBBI03 |
頁(從 - 到) | 1-4 |
頁數 | 4 |
期刊 | Japanese journal of applied physics |
卷 | 60 |
發行號 | SB |
DOIs | |
出版狀態 | Published - 1 5月 2021 |