On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures

Jenn-Fang Chen*, L. Yang, M. C. Wu, S. N.G. Chu, A. Y. Cho

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34 引文 斯高帕斯(Scopus)

摘要

The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k̇p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.

原文English
頁(從 - 到)3451-3455
頁數5
期刊Journal of Applied Physics
68
發行號7
DOIs
出版狀態Published - 1 十二月 1990

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