On the Critical Role of Ferroelectric Thickness for Negative Capacitance Transistor Optimization

Om Prakash, Aniket Gupta, Girish Pahwa, Yogesh S. Chauhan, Hussam Amrouch

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

This paper demonstrates the critical role that Ferroelectric (FE) layer thickness (t_{FE}) plays in Negative Capacitance (N C) transistors connecting device and circuit levels together. The study is done through fully-calibrated TCAD simulations for a 14nm FDSOI technology node, exploring the impact of t_{FE on the figures of merit of n-type and p-type devices, voltage transfer characteristic (VTC) and noise margin of inverter as well as the speed of buffer circuits. First, we analyze the device electrical parameters (e.g., I_{ON}, SS, I_{ON}/I_{OFF and C_{gg}) by varying t_{FE up to the maximum level at which hysteresis in the I- V characteristic starts. Then, we analyze the deleterious impact of Negative Differential Resistance (NDR), due to the drain to gate coupling, demonstrating how it imposes an additional constraint limiting the maximum t_{FE. We show the consequences of NDR effects on the VTC and noise margin of inverter, which are essential components for constructing robust clock trees in any chip. Finally, when it comes to circuit's performance, we demonstrate how the considerable increase in the gate's capacitance due to FE seriously degrades the circuit's performance imposing further constraints limiting the maximum t_{FE. All in all, our analysis provides guidance for device and circuit designers to select the optimal FE thickness for NCFETs in which hysteresis-free operations, reliability, and performance are jointly optimized.

原文English
主出版物標題2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728181769
DOIs
出版狀態Published - 8 4月 2021
事件5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, 中國
持續時間: 8 4月 202111 4月 2021

出版系列

名字2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
國家/地區中國
城市Chengdu
期間8/04/2111/04/21

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