On-chip ESD protection strategies for RF circuits in CMOS technology

Ming Dou Ker; Yuan Wen Hsiao

doi:10.1109/ICSICT.2006.306371

On-chip ESD protection strategies for RF circuits in CMOS technology

Ming Dou Ker^*, Yuan Wen Hsiao

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed.

原文	English
主出版物標題	ICSICT-2006
主出版物子標題	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者	IEEE Computer Society
頁面	1680-1683
頁數	4
ISBN（列印）	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306371
出版狀態	Published - 2006
事件	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China 持續時間: 23 10月 2006 → 26 10月 2006

出版系列

名字	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家/地區	China
城市	Shanghai
期間	23/10/06 → 26/10/06

存取文件

10.1109/ICSICT.2006.306371

其它文件與鏈接

Link to publication in Scopus

引用此

Ker, M. D., & Hsiao, Y. W. (2006). On-chip ESD protection strategies for RF circuits in CMOS technology. 於 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (頁 1680-1683). 文章 4098510 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306371

@inproceedings{1959bc7069f747cb8e1e4cee588e62e4,

title = "On-chip ESD protection strategies for RF circuits in CMOS technology",

abstract = "Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed.",

author = "Ker, {Ming Dou} and Hsiao, {Yuan Wen}",

year = "2006",

doi = "10.1109/ICSICT.2006.306371",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "1680--1683",

booktitle = "ICSICT-2006",

address = "United States",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

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Ker, MD & Hsiao, YW 2006, On-chip ESD protection strategies for RF circuits in CMOS technology. 於 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098510, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, 頁 1680-1683, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 23/10/06. https://doi.org/10.1109/ICSICT.2006.306371

On-chip ESD protection strategies for RF circuits in CMOS technology. / Ker, Ming Dou; Hsiao, Yuan Wen.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 1680-1683 4098510 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - On-chip ESD protection strategies for RF circuits in CMOS technology

AU - Ker, Ming Dou

AU - Hsiao, Yuan Wen

PY - 2006

Y1 - 2006

N2 - Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed.

AB - Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed.

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U2 - 10.1109/ICSICT.2006.306371

DO - 10.1109/ICSICT.2006.306371

M3 - Conference contribution

AN - SCOPUS:34547252674

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1680

EP - 1683

BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

ER -

Ker MD, Hsiao YW. On-chip ESD protection strategies for RF circuits in CMOS technology. 於 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 1680-1683. 4098510. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306371

On-chip ESD protection strategies for RF circuits in CMOS technology

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Conference

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