On-chip ESD protection design by using polysilicon diodes in CMOS technology for smart card application

Tai Ho Wang; Ming-Dou Ker

doi:10.1109/EOSESD.2000.890086

On-chip ESD protection design by using polysilicon diodes in CMOS technology for smart card application

Tai Ho Wang^*
, Ming-Dou Ker

^*此作品的通信作者

研究成果: Conference article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

A novel on-chip ESD protection design by using polysilicon diodes for smart card application is reported in this paper. By adding an efficient VDD-to-VSS clamp circuit, the HBM ESD level of the smart card IC with polysilicon diodes as the ESD protection devices have been successfully improved from the original approximately 300 V to become ≥3 kV. Different process splits have been experimentally evaluated to find the suitable doping concentration for optimizing, the polysilicon diodes for both smart card application and on-chip ESD protection design.

原文	English
文章編號	890086
頁（從 - 到）	266-275
頁數	10
期刊	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
DOIs	https://doi.org/10.1109/EOSESD.2000.890086
出版狀態	Published - 26 9月 2000
事件	Electrical Overstress/Electrostatic Discharge Symposium Proceedings - Anaheim, CA, USA 持續時間: 26 9月 2000 → 28 9月 2000

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10.1109/EOSESD.2000.890086

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引用此

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title = "On-chip ESD protection design by using polysilicon diodes in CMOS technology for smart card application",

abstract = "A novel on-chip ESD protection design by using polysilicon diodes for smart card application is reported in this paper. By adding an efficient VDD-to-VSS clamp circuit, the HBM ESD level of the smart card IC with polysilicon diodes as the ESD protection devices have been successfully improved from the original approximately 300 V to become ≥3 kV. Different process splits have been experimentally evaluated to find the suitable doping concentration for optimizing, the polysilicon diodes for both smart card application and on-chip ESD protection design.",

author = "Wang, \{Tai Ho\} and Ming-Dou Ker",

year = "2000",

month = sep,

day = "26",

doi = "10.1109/EOSESD.2000.890086",

language = "English",

pages = "266--275",

journal = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",

issn = "0739-5159",

publisher = "ESD Association",

note = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings ; Conference date: 26-09-2000 Through 28-09-2000",

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TY - JOUR

T1 - On-chip ESD protection design by using polysilicon diodes in CMOS technology for smart card application

AU - Wang, Tai Ho

AU - Ker, Ming-Dou

PY - 2000/9/26

Y1 - 2000/9/26

N2 - A novel on-chip ESD protection design by using polysilicon diodes for smart card application is reported in this paper. By adding an efficient VDD-to-VSS clamp circuit, the HBM ESD level of the smart card IC with polysilicon diodes as the ESD protection devices have been successfully improved from the original approximately 300 V to become ≥3 kV. Different process splits have been experimentally evaluated to find the suitable doping concentration for optimizing, the polysilicon diodes for both smart card application and on-chip ESD protection design.

AB - A novel on-chip ESD protection design by using polysilicon diodes for smart card application is reported in this paper. By adding an efficient VDD-to-VSS clamp circuit, the HBM ESD level of the smart card IC with polysilicon diodes as the ESD protection devices have been successfully improved from the original approximately 300 V to become ≥3 kV. Different process splits have been experimentally evaluated to find the suitable doping concentration for optimizing, the polysilicon diodes for both smart card application and on-chip ESD protection design.

UR - https://www.scopus.com/pages/publications/0034544873

U2 - 10.1109/EOSESD.2000.890086

DO - 10.1109/EOSESD.2000.890086

M3 - Conference article

AN - SCOPUS:0034544873

SN - 0739-5159

SP - 266

EP - 275

JO - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

JF - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

M1 - 890086

T2 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Y2 - 26 September 2000 through 28 September 2000

ER -

On-chip ESD protection design by using polysilicon diodes in CMOS technology for smart card application

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