TY - GEN
T1 - On characteristic fluctuation of nonideal bulk FinFET devices
AU - Li, Yiming
AU - Huang, Wen Tsung
PY - 2016/4/26
Y1 - 2016/4/26
N2 - This work, for the first time, estimates the random dopant fluctuation (RDF) on DC characteristics of trapezoidal bulk FinFET devices by using an experimentally calibrated 3D quantum-mechanically corrected device simulation. For bulk FinFET devices under the same channel volume, we analyze the impact of geometry variation and RDF on the threshold voltage, the on-/off-state current with respect to different channel fin angles. The channel fin angle increases, the on-state current increases owing to increase of total fin width, but small- and large-fin-angle devices have comparable RDF. The threshold voltage is affected to different extents by RDs appearing in the upper and lower channel fin regions. Two major factors, the total fin width and the RD's position, affecting the Vth fluctuation of RDF are discussed.
AB - This work, for the first time, estimates the random dopant fluctuation (RDF) on DC characteristics of trapezoidal bulk FinFET devices by using an experimentally calibrated 3D quantum-mechanically corrected device simulation. For bulk FinFET devices under the same channel volume, we analyze the impact of geometry variation and RDF on the threshold voltage, the on-/off-state current with respect to different channel fin angles. The channel fin angle increases, the on-state current increases owing to increase of total fin width, but small- and large-fin-angle devices have comparable RDF. The threshold voltage is affected to different extents by RDs appearing in the upper and lower channel fin regions. Two major factors, the total fin width and the RD's position, affecting the Vth fluctuation of RDF are discussed.
KW - Bulk FinFET Devices
KW - Modeling and Simulation
KW - Nonideal Channel Fin
KW - Random Dopant Fluctuation
KW - Threshold Voltage Fluctuation
UR - http://www.scopus.com/inward/record.url?scp=84971333751&partnerID=8YFLogxK
U2 - 10.1109/INEC.2014.7460436
DO - 10.1109/INEC.2014.7460436
M3 - Conference contribution
AN - SCOPUS:84971333751
T3 - 2014 IEEE International Nanoelectronics Conference, INEC 2014
BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE International Nanoelectronics Conference, INEC 2014
Y2 - 28 July 2014 through 31 July 2014
ER -