Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Surface Morphology 100%
• A-plane GaN 100%
• Surface Dislocations 100%
• Nucleation Layer 66%
• Low Density 33%
• Mean Roughness 33%
• Growth Conditions 33%
• High Temperature 33%
• Smooth Surface 33%
• R-plane Sapphire 33%
• Threading Dislocation 33%
• Transmission Electronic Microscopy 33%

Material Science

• Surface Morphology 100%
• Metal-Organic Chemical Vapor Deposition 100%
• Nucleation 66%
• Density 33%
• Thin Films 33%
• Transmission Electron Microscopy 33%
• Sapphire 33%
• Aluminum Nitride 33%
• Surface (Surface Science) 33%

Engineering

• Surface Morphology 100%
• Metal Organic Chemical Vapor Deposition 100%
• Thin Films 33%
• Growth Condition 33%
• Smooth Surface 33%
• Optimal Condition 33%
• Threading Dislocation 33%