Indium oxynitride nanoparticles were synthesized on a silicon substrate in nitrogen atmosphere using the method involving thermal evaporation of pure indium in a two-zone reactor. Nanoscale compositional analysis by energy dispersion spectrum showed the existence of indium oxynitride compound. X-ray diffraction analysis further confirmed high crystallization and nitrogen atom existence within the nanoparticles. Scanning electron microscopy investigations showed shape transformation from amorphous sphere to well-shaped octahedron with an average nanoparticle size ranging from 50 nm to 1 μm when the growth temperature of the substrate was increased from 600 to 900 °C. Photoluminescence study was performed on the indium oxynitride nanoparticle samples grown at different temperatures. It was found that with increasing growth temperatures there was not only the formation of high quality indium oxynitride nanoparticles but also an increase in the intensities of emissions. These nanoparticles grown at 900 °C could emit a strong photoluminescence spectrum centered around 700 nm with a broad full width at half maximum of about 250 nm, spanning the whole red segment.
|頁（從 - 到）||1332-1335|
|期刊||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版狀態||Published - 1 七月 2006|