Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

J. L. Shen; Y. C. Lee; G. W. Shu; Wu-Ching Chou; W. Y. Uen

doi:10.1088/0268-1242/17/11/102

Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

J. L. Shen^*, Y. C. Lee, G. W. Shu, Wu-Ching Chou, W. Y. Uen

^*此作品的通信作者

電子物理學系

研究成果: Letter › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We report the first observation of persistent photoconductivity (PPC) in In_1-xGa_xAs_yP_1-y epilayers. The decay behaviour of PPC is similar to that in Al_xGa_1-xAs and can be well described by a stretch-exponential function. The origin of PPC is discussed in terms of several models. Under the excitation-energy, temperature and alloy-composition dependence of the PPC effects, it is found the lattice relaxation of DX-like impurity is responsible for PPC in In_1-xGa_xAs_yP_1-y. Our results indicate that PPC in In_1-xGa_xAs_yP_1-y has a similar origin as that in Al_xGa_1-xAs. However, the decay-time constant and electron-capture barrier in In_1-xGa_xAs_yP_1-y are about 11 orders of magnitude and 46% smaller than those in Al_xGa_1-xAs, respectively.

原文	English
期刊	Semiconductor Science and Technology
卷	17
發行號	11
DOIs	https://doi.org/10.1088/0268-1242/17/11/102
出版狀態	Published - 1 11月 2002

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@article{8a54b28806f64778bc8309bc353c6e94,

title = "Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers",

abstract = "We report the first observation of persistent photoconductivity (PPC) in In1-xGaxAsyP1-y epilayers. The decay behaviour of PPC is similar to that in AlxGa1-xAs and can be well described by a stretch-exponential function. The origin of PPC is discussed in terms of several models. Under the excitation-energy, temperature and alloy-composition dependence of the PPC effects, it is found the lattice relaxation of DX-like impurity is responsible for PPC in In1-xGaxAsyP1-y. Our results indicate that PPC in In1-xGaxAsyP1-y has a similar origin as that in AlxGa1-xAs. However, the decay-time constant and electron-capture barrier in In1-xGaxAsyP1-y are about 11 orders of magnitude and 46% smaller than those in AlxGa1-xAs, respectively.",

author = "Shen, {J. L.} and Lee, {Y. C.} and Shu, {G. W.} and Wu-Ching Chou and Uen, {W. Y.}",

year = "2002",

month = nov,

day = "1",

doi = "10.1088/0268-1242/17/11/102",

language = "English",

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journal = "Semiconductor Science and Technology",

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TY - JOUR

T1 - Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

AU - Shen, J. L.

AU - Lee, Y. C.

AU - Shu, G. W.

AU - Chou, Wu-Ching

AU - Uen, W. Y.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - We report the first observation of persistent photoconductivity (PPC) in In1-xGaxAsyP1-y epilayers. The decay behaviour of PPC is similar to that in AlxGa1-xAs and can be well described by a stretch-exponential function. The origin of PPC is discussed in terms of several models. Under the excitation-energy, temperature and alloy-composition dependence of the PPC effects, it is found the lattice relaxation of DX-like impurity is responsible for PPC in In1-xGaxAsyP1-y. Our results indicate that PPC in In1-xGaxAsyP1-y has a similar origin as that in AlxGa1-xAs. However, the decay-time constant and electron-capture barrier in In1-xGaxAsyP1-y are about 11 orders of magnitude and 46% smaller than those in AlxGa1-xAs, respectively.

AB - We report the first observation of persistent photoconductivity (PPC) in In1-xGaxAsyP1-y epilayers. The decay behaviour of PPC is similar to that in AlxGa1-xAs and can be well described by a stretch-exponential function. The origin of PPC is discussed in terms of several models. Under the excitation-energy, temperature and alloy-composition dependence of the PPC effects, it is found the lattice relaxation of DX-like impurity is responsible for PPC in In1-xGaxAsyP1-y. Our results indicate that PPC in In1-xGaxAsyP1-y has a similar origin as that in AlxGa1-xAs. However, the decay-time constant and electron-capture barrier in In1-xGaxAsyP1-y are about 11 orders of magnitude and 46% smaller than those in AlxGa1-xAs, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0036852918&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/17/11/102

DO - 10.1088/0268-1242/17/11/102

M3 - Letter

AN - SCOPUS:0036852918

VL - 17

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

ER -

Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

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