Observation of pendellösung fringes in reflection-section topographs of bent silicon crystals

H. D. Chen*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Pendellösung fringes have been observed in reflection-section topographs of bent silicon single crystals. The number of fringes increases while the separation distances between fringes decrease with decreasing radius of curvature. Excessive bending of the lattice planes adjacent to a dislocation produces finer fringes. These fringes may be employed as a means to detect minute lattice strains.

原文English
頁(從 - 到)65-70
頁數6
期刊Materials Letters
4
發行號2
DOIs
出版狀態Published - 1 一月 1986

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