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Observation of carrier depletion and emission effects on capacitance dispersion in relaxed in
0.2
Ga
0.8
As/GaAs quantum wells
Jenn-Fang Chen
*
, P. Y. Wang, C. Y. Tsai, J. S. Wang, N. C. Chen
*
此作品的通信作者
電子物理學系
研究成果
:
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›
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5
引文 斯高帕斯(Scopus)
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深入研究「Observation of carrier depletion and emission effects on capacitance dispersion in relaxed in
0.2
Ga
0.8
As/GaAs quantum wells」主題。共同形成了獨特的指紋。
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Keyphrases
Capacitance Dispersion
100%
GaAs Quantum Well
100%
Depletion Effect
100%
Carrier Depletion
100%
Emission Effects
100%
Frequency Spectrum
66%
InGaAs
66%
Capacitance-frequency
66%
Capacitance
33%
Deep Level Transient Spectroscopy
33%
Capacitance Model
33%
Frequency Dispersion
33%
Capacitance Variable Time
33%
Resistive Layer
33%
Defect States
33%
High Resistance
33%
Misfit Dislocation
33%
Acceptor Trap
33%
Low-frequency Dispersion
33%
Engineering
Gallium Arsenide
100%
Quantum Well
100%
Frequency Spectrum
100%
Frequency Dispersion
100%
Indium Gallium Arsenide
100%
Critical Thickness
100%
Constant Time
50%
Transients
50%
Resistive
50%
Deep Level
50%
Misfit Dislocation
50%
Material Science
Gallium Arsenide
100%
Capacitance
100%
Quantum Well
100%
Indium Gallium Arsenide
40%
Deep-Level Transient Spectroscopy
20%
Dislocation (Crystal)
20%
Physics
Quantum Wells
100%
Time Constant
50%
Transients
50%