Observation of a Dominant EL2-Iike Mid-Gap Trap in In0.12Ga0.88As/GaAs Superlattice Grown at Low Temperature by Molecular Beam Epitaxy

Jenn-Fang Chen; Pie Yong Wang; Jiin Shung Wang; Hong Zheng Wong

doi:10.1143/JJAP.38.6421

Observation of a Dominant EL2-Iike Mid-Gap Trap in In_0.12Ga_0.88As/GaAs Superlattice Grown at Low Temperature by Molecular Beam Epitaxy

Jenn-Fang Chen^*, Pie Yong Wang, Jiin Shung Wang, Hong Zheng Wong

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電子物理學系

研究成果: Article › 同行評審

摘要

Admittance spcctroscopy is used to study a low-temperature (LT)-gro In relaxed In_0.12Ga_0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E2 = 0.73 eV, a = 4.6 × 10^-11 cm² and E_a = 0.75 eV, a = 3.7 × 10^-15 cm²) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 cV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.

原文	English
頁（從 - 到）	6421-6422
頁數	2
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	38
發行號	11
DOIs	https://doi.org/10.1143/JJAP.38.6421
出版狀態	Published - 1999

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10.1143/JJAP.38.6421

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@article{a4aa82f7deb8447d83478f741db88b7b,

title = "Observation of a Dominant EL2-Iike Mid-Gap Trap in In0.12Ga0.88As/GaAs Superlattice Grown at Low Temperature by Molecular Beam Epitaxy",

abstract = "Admittance spcctroscopy is used to study a low-temperature (LT)-gro In relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E2 = 0.73 eV, a = 4.6 × 10-11 cm2 and Ea = 0.75 eV, a = 3.7 × 10-15 cm2) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 cV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.",

keywords = "Deep levels, IngaAs/GaAs superlattice, Low-temperature MBE growth",

author = "Jenn-Fang Chen and Wang, {Pie Yong} and Wang, {Jiin Shung} and Wong, {Hong Zheng}",

year = "1999",

doi = "10.1143/JJAP.38.6421",

language = "English",

volume = "38",

pages = "6421--6422",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

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TY - JOUR

T1 - Observation of a Dominant EL2-Iike Mid-Gap Trap in In0.12Ga0.88As/GaAs Superlattice Grown at Low Temperature by Molecular Beam Epitaxy

AU - Chen, Jenn-Fang

AU - Wang, Pie Yong

AU - Wang, Jiin Shung

AU - Wong, Hong Zheng

PY - 1999

Y1 - 1999

N2 - Admittance spcctroscopy is used to study a low-temperature (LT)-gro In relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E2 = 0.73 eV, a = 4.6 × 10-11 cm2 and Ea = 0.75 eV, a = 3.7 × 10-15 cm2) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 cV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.

AB - Admittance spcctroscopy is used to study a low-temperature (LT)-gro In relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E2 = 0.73 eV, a = 4.6 × 10-11 cm2 and Ea = 0.75 eV, a = 3.7 × 10-15 cm2) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 cV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.

KW - Deep levels

KW - IngaAs/GaAs superlattice

KW - Low-temperature MBE growth

UR - http://www.scopus.com/inward/record.url?scp=0033357189&partnerID=8YFLogxK

U2 - 10.1143/JJAP.38.6421

DO - 10.1143/JJAP.38.6421

M3 - Article

AN - SCOPUS:0033357189

SN - 0021-4922

VL - 38

SP - 6421

EP - 6422

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 11

ER -

Observation of a Dominant EL2-Iike Mid-Gap Trap in In0.12Ga0.88As/GaAs Superlattice Grown at Low Temperature by Molecular Beam Epitaxy

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Observation of a Dominant EL2-Iike Mid-Gap Trap in In_0.12Ga_0.88As/GaAs Superlattice Grown at Low Temperature by Molecular Beam Epitaxy