Numerical study on doping and positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

Po Ching Wu, Shun Chieh Hsu, Yun Han Jhen, Yao Zhong Dong, Yan Zhang Ling, Lung Hsing Hsu, Hao-Chung Kuo, Chien-Chung Lin

研究成果: Conference contribution同行評審

摘要

In this work, we demonstrate the doping concentration and positioning effect of the type-II quantum well (QR) on the solar cell performances in terms of numerical simulation. The variation in doping concentration and location can affect the band diagram seriously and possibly form the back surface field which can either facilitate or deteriorate the carrier collection. A wide range of parameters are calculated to reveal this trend and the previous experimental results are also discussed.

原文English
主出版物標題2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2115-2117
頁數3
ISBN(電子)9781509027248
DOIs
出版狀態Published - 18 11月 2016
事件43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, 美國
持續時間: 5 6月 201610 6月 2016

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
2016-November
ISSN(列印)0160-8371

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
國家/地區美國
城市Portland
期間5/06/1610/06/16

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