Numerical study of In0.15Ga0.85N/GaN MQW solar cells with varying well band structure

Hsun Wen Wang, Chi Chang Hsieh, Fang I. Lai, Shiuan-Huei Lin, Hao-Chung Kuo*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The photovoltaic properties of 14 pairs In015Ga 0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In 015Ga0.85N/GaN MQW solar cell had Voc of 2.37V, Jsc of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell.

原文English
主出版物標題39th IEEE Photovoltaic Specialists Conference, PVSC 2013
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2136-2138
頁數3
ISBN(列印)9781479932993
DOIs
出版狀態Published - 1 1月 2013
事件39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
持續時間: 16 6月 201321 6月 2013

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
國家/地區United States
城市Tampa, FL
期間16/06/1321/06/13

指紋

深入研究「Numerical study of In0.15Ga0.85N/GaN MQW solar cells with varying well band structure」主題。共同形成了獨特的指紋。

引用此