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Numerical Simulation of Trapped Hole Lateral Migration and Induced Threshold Voltage Retention Loss in a SONOS Flash Memory
Cheng Min Jiang
*
, Chih Jung Wu, Tahui Wang
*
此作品的通信作者
電機工程學系
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引文 斯高帕斯(Scopus)
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Keyphrases
Flash Memory
100%
Lateral Migration
100%
Numerical Simulation
100%
Oxide Nitride
100%
Threshold Voltage
100%
Silicon Oxide
100%
Nitrided Oxide
100%
Trapped Holes
100%
Retention Loss
100%
Voltage Retention
100%
Silicon Nitride
28%
Nitrides
28%
Thermally Assisted Tunneling
28%
Measurement Results
14%
Emission Processes
14%
Poole-Frenkel Emission
14%
Valence Band
14%
Transient Simulation
14%
Drift-diffusion
14%
Transport Mechanism
14%
Flash Memory Cells
14%
Recapture
14%
Continuous Energy Distribution
14%
Valance Band
14%
Source-side
14%
Silicon Cells
14%
Program Level
14%
Free Hole
14%
Engineering
Nitride
100%
Flash Memory
100%
Silicon-Oxide-Nitride-Oxide-Silicon
100%
Tunnel Construction
50%
Valence Band
25%
Transients
25%
Poole-Frenkel Emission
25%
One Dimensional
25%
Energy Distribution
25%
Transport Mechanism
25%
Source Side
25%
Silicon Cell
25%
Free Hole
25%
Program Level
25%
Earth and Planetary Sciences
Threshold Voltage
100%
Nitride
100%
Silicon Oxide
100%
Emissions
50%
Silicon Nitride
33%
Energy Distribution
16%
Physics
Nitride
100%
Threshold Voltage
100%
Silicon Oxide
100%
Silicon Nitride
33%
Energy Distribution
16%
Transients
16%