Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

Yu An Chen; Chia Wei Chang; Cheng-Huang Kuo

doi:10.1109/LED.2015.2478969

Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

Yu An Chen, Chia Wei Chang, Cheng-Huang Kuo

照明與能源光電研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.

原文	English
文章編號	7268843
頁（從 - 到）	1135-1137
頁數	3
期刊	Ieee Electron Device Letters
卷	36
發行號	11
DOIs	https://doi.org/10.1109/LED.2015.2478969
出版狀態	Published - 1 11月 2015

存取文件

10.1109/LED.2015.2478969

其它文件與鏈接

Link to publication in Scopus

引用此

@article{f8eb6609f13b4013a814aee12fd73923,

title = "Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template",

abstract = "Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.",

keywords = "AlN, HVPE, LED, PSS",

author = "Chen, {Yu An} and Chang, {Chia Wei} and Cheng-Huang Kuo",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2015",

month = nov,

day = "1",

doi = "10.1109/LED.2015.2478969",

language = "English",

volume = "36",

pages = "1135--1137",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

AU - Chen, Yu An

AU - Chang, Chia Wei

AU - Kuo, Cheng-Huang

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.

AB - Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.

KW - AlN

KW - HVPE

KW - LED

KW - PSS

UR - http://www.scopus.com/inward/record.url?scp=84946558754&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2478969

DO - 10.1109/LED.2015.2478969

M3 - Article

AN - SCOPUS:84946558754

SN - 0741-3106

VL - 36

SP - 1135

EP - 1137

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 11

M1 - 7268843

ER -

Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

摘要

存取文件

其它文件與鏈接

指紋

引用此