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Numerical analysis of oxygen-related defects in amorphous in-w-o nanosheet thin-film transistor
Wan Ta Fan,
Po Tsun Liu
*
, Po Yi Kuo, Chien Min Chang, I. Han Liu, Yue Kuo
*
此作品的通信作者
光電工程學系
研究成果
:
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同行評審
5
引文 斯高帕斯(Scopus)
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Engineering & Materials Science
Nanosheets
100%
Thin film transistors
84%
Numerical analysis
57%
Oxygen
53%
Amorphous semiconductors
50%
Defects
45%
Oxide semiconductors
31%
Hafnium oxides
23%
Fermi level
22%
Density functional theory
19%
Gate dielectrics
18%
Indium
17%
Doping (additives)
14%
Threshold voltage
14%
Tungsten
14%
Oxides
11%
Computer aided design
11%
Monitoring
7%
Chemical Compounds
Nanosheet
54%
Crystal Displacement
46%
Amorphous Material
45%
Dioxygen
32%
Density of Interface States
24%
Oxide
21%
Defect Level
20%
Semiconductor
20%
Tungsten Oxide
15%
Hafnium Atom
15%
Bulk Density
15%
Fermi Level
15%
Chemical Species
14%
Interstitial
13%
Dielectric Material
11%
Doping Material
11%
Voltage
9%
Flow
8%
Density Functional Theory
8%
Energy
6%