N++GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts

Romualdo A. Ferreyra*, Asamira Suzuki, Tomohiro Kazumoto, Daisuke Ueda

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Non-alloy ohmic contacts were implemented based on the heavily germanium-doped GaN regrown layer by using the pico-second laser ablation technique for the first time. Owing to the enhanced surface diffusion of the ablated high-energy atoms, smoothly refilled epitaxial layers were achieved in the AlGaN/GaN recess regions. Selective growth was successfully carried out by using hydrogen silsesquioxane (HSQ) film. Contact resistance of ∼0.17 Ω · mm with a specific contact resistance in the order of ∼ 10-7 Ω · cm2 was obtained by using non-alloy Hf/Al/Ti metal stacks.

原文English
文章編號7964732
頁(從 - 到)1079-1081
頁數3
期刊IEEE Electron Device Letters
38
發行號8
DOIs
出版狀態Published - 1 八月 2017

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