A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.
|頁（從 - 到）||457-460|
|期刊||Technical Digest - International Electron Devices Meeting, IEDM|
|出版狀態||Published - 1 十二月 2007|
|事件||2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States|
持續時間: 10 十二月 2007 → 12 十二月 2007