Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices

Ming Cheng Lin*, Chao Ta Fan, Shun Wei Tang, Tian Li Wu, Chih Fang Huang

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.

原文English
主出版物標題2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面81-84
頁數4
ISBN(電子)9781665422017
DOIs
出版狀態Published - 2022
事件34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
持續時間: 22 5月 202225 5月 2022

出版系列

名字Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2022-May
ISSN(列印)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
國家/地區Canada
城市Vancouver
期間22/05/2225/05/22

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