TY - GEN
T1 - Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices
AU - Lin, Ming Cheng
AU - Fan, Chao Ta
AU - Tang, Shun Wei
AU - Wu, Tian Li
AU - Huang, Chih Fang
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.
AB - Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.
UR - http://www.scopus.com/inward/record.url?scp=85134199386&partnerID=8YFLogxK
U2 - 10.1109/ISPSD49238.2022.9813533
DO - 10.1109/ISPSD49238.2022.9813533
M3 - Conference contribution
AN - SCOPUS:85134199386
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 81
EP - 84
BT - 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Y2 - 22 May 2022 through 25 May 2022
ER -