Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio

Yi Hong Wu; Po Yi Kuo; Yi Hsien Lu; Yi Hsuan Chen; Tien-Sheng Chao

doi:10.1109/LED.2010.2061215

Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio

Yi Hong Wu^*, Po Yi Kuo, Yi Hsien Lu, Yi Hsuan Chen, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n⁺ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm²/Vċs), and large on/off-current ratio of more than 10⁹(I_OFF = 4×10^-14\ I_ON=7×10^-5 and W _mask/L_mask =\break \hbox10μm/3μm).

原文	English
文章編號	5559329
頁（從 - 到）	1233-1235
頁數	3
期刊	IEEE Electron Device Letters
卷	31
發行號	11
DOIs	https://doi.org/10.1109/LED.2010.2061215
出版狀態	Published - 1 11月 2010

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10.1109/LED.2010.2061215

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title = "Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio",

abstract = "We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n+ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm2/Vċs), and large on/off-current ratio of more than 109(IOFF = 4×10-14\ ION=7×10-5 and W mask/Lmask =\break \hbox10μm/3μm).",

keywords = "Ni-salicided, polycrystalline silicon thin-film transistors (poly-Si TFTs), symmetric S/D, vertical channel",

author = "Wu, {Yi Hong} and Kuo, {Po Yi} and Lu, {Yi Hsien} and Chen, {Yi Hsuan} and Tien-Sheng Chao",

year = "2010",

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doi = "10.1109/LED.2010.2061215",

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T1 - Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio

AU - Wu, Yi Hong

AU - Kuo, Po Yi

AU - Lu, Yi Hsien

AU - Chen, Yi Hsuan

AU - Chao, Tien-Sheng

PY - 2010/11/1

Y1 - 2010/11/1

N2 - We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n+ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm2/Vċs), and large on/off-current ratio of more than 109(IOFF = 4×10-14\ ION=7×10-5 and W mask/Lmask =\break \hbox10μm/3μm).

AB - We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n+ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm2/Vċs), and large on/off-current ratio of more than 109(IOFF = 4×10-14\ ION=7×10-5 and W mask/Lmask =\break \hbox10μm/3μm).

KW - Ni-salicided

KW - polycrystalline silicon thin-film transistors (poly-Si TFTs)

KW - symmetric S/D

KW - vertical channel

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U2 - 10.1109/LED.2010.2061215

DO - 10.1109/LED.2010.2061215

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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M1 - 5559329

ER -

Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio

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