Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio

Yi Hong Wu*, Po Yi Kuo, Yi Hsien Lu, Yi Hsuan Chen, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and on state. The off -state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n+ floating-region length. The on-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm2/Vċs), and large on/off-current ratio of more than 109(IOFF = 4×10-14\ ION=7×10-5 and W mask/Lmask =\break \hbox10μm/3μm).

原文English
文章編號5559329
頁(從 - 到)1233-1235
頁數3
期刊IEEE Electron Device Letters
31
發行號11
DOIs
出版狀態Published - 1 11月 2010

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