Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu; Hsin Chiang You; Fu-Hsiang Ko; Wen Luh Yang

doi:10.1109/INEC.2010.5424933

Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu, Hsin Chiang You, Fu-Hsiang Ko, Wen Luh Yang^*

^*此作品的通信作者

奈米科技碩博班

研究成果: Conference contribution › 同行評審

摘要

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 10⁶ sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 10⁴ program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

原文	English
主出版物標題	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面	1228-1229
頁數	2
DOIs	https://doi.org/10.1109/INEC.2010.5424933
出版狀態	Published - 5 5月 2010
事件	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China 持續時間: 3 1月 2010 → 8 1月 2010

出版系列

名字	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
國家/地區	China
城市	Hongkong
期間	3/01/10 → 8/01/10

存取文件

10.1109/INEC.2010.5424933

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{c899ed12c7b94027af4cb3db0f4bdd11,

title = "Novel sol-gel derived SONOS-type nanocrystal memory",

abstract = "A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.",

author = "Wu, {Chi Chang} and You, {Hsin Chiang} and Fu-Hsiang Ko and Yang, {Wen Luh}",

year = "2010",

month = may,

day = "5",

doi = "10.1109/INEC.2010.5424933",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1228--1229",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Wu, CC, You, HC, Ko, F-H & Yang, WL 2010, Novel sol-gel derived SONOS-type nanocrystal memory. 於 INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424933, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, 頁 1228-1229, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424933

TY - GEN

T1 - Novel sol-gel derived SONOS-type nanocrystal memory

AU - Wu, Chi Chang

AU - You, Hsin Chiang

AU - Ko, Fu-Hsiang

AU - Yang, Wen Luh

PY - 2010/5/5

Y1 - 2010/5/5

N2 - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

AB - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

UR - http://www.scopus.com/inward/record.url?scp=77951655417&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424933

DO - 10.1109/INEC.2010.5424933

M3 - Conference contribution

AN - SCOPUS:77951655417

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 1228

EP - 1229

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Novel sol-gel derived SONOS-type nanocrystal memory

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此