Novel small-dimension Poly-Si TFTs with improved driving current and suppressed short channel effects

Hsiao-Wen Zan*, Chun Yen Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A novel small-dimension ply-Si TFT with ultrathin channel (300 A) and W-raised source/drain is proposed. The kink effect is effectively suppressed ue to the reduced channel thickness. Tungsten film selectively grown on the source/drain region greatly improves the sheet resistance as well as increases the drain current. Furthermore, the W filf is selectively deposited under low temperature (300 C). The process is imple and compatible with conventional low-temperature poly-Si (LTPS) process. Characteristics of devices with different channel thicknesses and dimensions sare also studied, revealing that new devices with ultrathin channel are free from the floating body effect.

原文English
主出版物標題European Solid-State Device Research Conference
編輯Elena Gnani, Giorgio Baccarani, Massimo Rudan
發行者IEEE Computer Society
頁面531-534
頁數4
ISBN(電子)8890084782
DOIs
出版狀態Published - 2002
事件32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
持續時間: 24 9月 200226 9月 2002

出版系列

名字European Solid-State Device Research Conference
ISSN(列印)1930-8876

Conference

Conference32nd European Solid-State Device Research Conference, ESSDERC 2002
國家/地區Italy
城市Firenze
期間24/09/0226/09/02

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