@inproceedings{3e0909f8613045cdafefc9af1007971c,
title = "Novel small-dimension Poly-Si TFTs with improved driving current and suppressed short channel effects",
abstract = "A novel small-dimension ply-Si TFT with ultrathin channel (300 A) and W-raised source/drain is proposed. The kink effect is effectively suppressed ue to the reduced channel thickness. Tungsten film selectively grown on the source/drain region greatly improves the sheet resistance as well as increases the drain current. Furthermore, the W filf is selectively deposited under low temperature (300 C). The process is imple and compatible with conventional low-temperature poly-Si (LTPS) process. Characteristics of devices with different channel thicknesses and dimensions sare also studied, revealing that new devices with ultrathin channel are free from the floating body effect.",
author = "Hsiao-Wen Zan and Chang, {Chun Yen}",
year = "2002",
doi = "10.1109/ESSDERC.2002.194985",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "531--534",
editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",
booktitle = "European Solid-State Device Research Conference",
address = "美國",
note = "32nd European Solid-State Device Research Conference, ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",
}