Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

C. H. Lai; Albert Chin; K. C. Chiang; W. J. Yoo; C. F. Cheng; S. P. McAlister; C. C. Chi; P. Wu

doi:10.1109/.2005.1469271

Novel SiO₂/AlN/HfAlO/IrO₂ memory with fast erase, large ΔV_th and good retention

C. H. Lai^*, Albert Chin, K. C. Chiang, W. J. Yoo, C. F. Cheng, S. P. McAlister, C. C. Chi, P. Wu

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研究成果: Conference article › 同行評審

43 引文斯高帕斯（Scopus）

摘要

Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO₂ with low leakage current, the SiO₂/AlN/HfAlO(κ=17)/IrO₂ device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔV_th and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔV_th and 3.4V for 85°C 10-year retention at 1ms erase.

原文	English
文章編號	1469271
頁（從 - 到）	210-211
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
卷	2005
DOIs	https://doi.org/10.1109/.2005.1469271
出版狀態	Published - 1 12月 2005
事件	2005 Symposium on VLSI Technology - Kyoto, 日本持續時間: 14 6月 2005 → 14 6月 2005

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@article{09a04224bd9d4dbd8d4876a11e5a3cac,

title = "Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention",

abstract = "Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.",

author = "Lai, {C. H.} and Albert Chin and Chiang, {K. C.} and Yoo, {W. J.} and Cheng, {C. F.} and McAlister, {S. P.} and Chi, {C. C.} and P. Wu",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/.2005.1469271",

language = "English",

volume = "2005",

pages = "210--211",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 Symposium on VLSI Technology ; Conference date: 14-06-2005 Through 14-06-2005",

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TY - JOUR

T1 - Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

AU - Lai, C. H.

AU - Chin, Albert

AU - Chiang, K. C.

AU - Yoo, W. J.

AU - Cheng, C. F.

AU - McAlister, S. P.

AU - Chi, C. C.

AU - Wu, P.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.

AB - Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.

UR - http://www.scopus.com/inward/record.url?scp=33745134383&partnerID=8YFLogxK

U2 - 10.1109/.2005.1469271

DO - 10.1109/.2005.1469271

M3 - Conference article

AN - SCOPUS:33745134383

SN - 0743-1562

VL - 2005

SP - 210

EP - 211

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469271

T2 - 2005 Symposium on VLSI Technology

Y2 - 14 June 2005 through 14 June 2005

ER -

Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

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Novel SiO₂/AlN/HfAlO/IrO₂ memory with fast erase, large ΔV_th and good retention