Novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF2-implanted source/drain extension

Sun Jay Chang, Chun Yen Chang, Tien-Sheng Chao, Sheng Zhen Zhong, Wen Kuan Yeh, Tiao Yuan Huang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A novel process flow employing a sacrificial tetraethyl orthosilicate/polycrystalline silicon (TEOS/poly-Si) gate stack is proposed for fabricating fluorine-enhanced-boron-penetration-free p-channel metal oxide semiconductor field effect transistors (p-MOSFET's) with shallow BF2-implanted source/drain (S/D) extension. With the presence of the sacrificial TEOS/poly-Si gate stack as the mask during the shallow BF2 implant, the incorporated fluorine atoms are trapped in the sacrificial TEOS top layer and can be subsequently removed. The new process thus offers a unique opportunity of achieving an ultra shallow S/D extension characteristic of the BF2 shallow implant, while not suffering from any fluorine-enhanced boron penetration normally accompanying the BF2 implant. Excellent transistor performance with improved gate oxide integrity has been successfully demonstrated on p-MOSFET's fabricated with the new process flow.

原文English
頁(從 - 到)381-383
頁數3
期刊IEEE Electron Device Letters
21
發行號8
DOIs
出版狀態Published - 1 8月 2000

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