Novel pH sensor based on vertical silicon nanowire electrilyte-insulator- semiconductor structure

  • Yi Ting Lin*
  • , Yu Hong Yu
  • , Tzu Chien Chang
  • , Yu Chen
  • , Guo Jun Zhang
  • , Shi Yang Zhu
  • , Chao Sung Lai
  • *此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensor, that surface to volume ratio higher than one dimensional silicon nanowire. In this paper, a novel vertical silicon nanowire electrolyte-insulator-semiconductor (EIS) structure with an ALD-HfO2 sensing membrane is proposed for the first time for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using an HP4284A LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. A postdeposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.7 mV/pH.

原文English
主出版物標題ISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering
頁面16-21
頁數6
DOIs
出版狀態Published - 2011
事件1st International Symposium on Bioengineering, ISOB 2011 - Singapore, 新加坡
持續時間: 19 1月 201119 1月 2011

出版系列

名字ISOB 2011 - Proceedings of the 1st International Symposium ISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering

Conference

Conference1st International Symposium on Bioengineering, ISOB 2011
國家/地區新加坡
城市Singapore
期間19/01/1119/01/11

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