Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

K. Y. Hsiang*, Y. C. Chen, F. S. Chang, C. Y. Lin, C. Y. Liao, Z. F. Lou, J. Y. Lee, W. C. Ray, Z. X. Li, C. C. Wang, H. C. Tseng, P. H. Chen, J. H. Tsai, M. H. Liao, T. H. Hou, C. W. Liu, P. T. Huang, P. Su, M. H. Lee

*此作品的通信作者

研究成果: Conference contribution同行評審

8 引文 斯高帕斯(Scopus)

摘要

Opposite polarity cycling recovery (OPCR) is proposed for the first time to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed toward the prospect of unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to be 5.6×1011 cycles, while achieving the nondegradation and complete restoration of Pr. Furthermore, the access scheme of 1T1C AFE-RAM is presented for the proposed alternate polarity operation.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3251-3254
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

指紋

深入研究「Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance」主題。共同形成了獨特的指紋。

引用此