@article{0b83bf5c9d6b45b991cf026b44b877c7,
title = "Novel Operation Schemes to Improve Device Reliability in a Localized Trapping Storage SONOS-type Flash Memory",
abstract = "Over erasure, charge gain in low Vt state, and charge loss in high Vt state are found to be the most severe reliability issues in a localized trapping storage flash memory cell. In this paper, based on our understanding of physical mechanisms, we demonstrate that by adding vertical electrical field treatments during program/erase operation, the over erasure and data retentivities in high/low Vt states are significantly improved.",
author = "Yeh, {C. C.} and Tsai, {W. J.} and Lu, {T. C.} and Chen, {H. Y.} and Lai, {H. C.} and Zous, {N. K.} and Liao, {Y. Y.} and You, {G. D.} and Cho, {S. K.} and Liu, {C. C.} and Hsu, {F. S.} and Huang, {L. T.} and Chiang, {W. S.} and Liu, {C. J.} and Cheng, {C. F.} and Chou, {M. H.} and Chen, {C. H.} and Ta-Hui Wang and Wenchi Ting and Sam Pan and Joseph Ku and Lu, {Chih Yuan}",
year = "2003",
month = dec,
day = "1",
doi = "10.1109/IEDM.2003.1269204",
language = "English",
pages = "173--176",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",
}