A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.
|頁（從 - 到）||889-892|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 12月 1996|
|事件||Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
持續時間: 8 12月 1996 → 11 12月 1996