TY - JOUR
T1 - Novel Octagonal Device Structure for Output Transistors in Deep-Submicron Low-Voltage CMOS Technology
AU - Ker, Ming-Dou
AU - Wu, Tain Shun
N1 - Publisher Copyright:
© 1996 IEEE
PY - 1996
Y1 - 1996
N2 - A novel device structure to effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.
AB - A novel device structure to effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.
UR - http://www.scopus.com/inward/record.url?scp=0030406633&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1996.554122
DO - 10.1109/IEDM.1996.554122
M3 - Conference article
AN - SCOPUS:0030406633
SN - 0163-1918
SP - 889
EP - 892
JO - Technical Digest - International Electron Devices Meeting, IEDM
JF - Technical Digest - International Electron Devices Meeting, IEDM
M1 - 5552565
T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting
Y2 - 8 December 1996 through 11 December 1996
ER -