Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

Ming-Dou Ker; Tain Shun Wu

doi:10.1109/IEDM.1996.554122

Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

Ming-Dou Ker^*, Tain Shun Wu

^*此作品的通信作者

電子研究所

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.

原文	English
文章編號	5552565
頁（從 - 到）	889-892
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1996.554122
出版狀態	Published - 1 12月 1996
事件	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA 持續時間: 8 12月 1996 → 11 12月 1996

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10.1109/IEDM.1996.554122

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title = "Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology",

abstract = "A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.",

author = "Ming-Dou Ker and Wu, {Tain Shun}",

year = "1996",

month = dec,

day = "1",

doi = "10.1109/IEDM.1996.554122",

language = "English",

pages = "889--892",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

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T1 - Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

AU - Ker, Ming-Dou

AU - Wu, Tain Shun

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.

AB - A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.

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U2 - 10.1109/IEDM.1996.554122

DO - 10.1109/IEDM.1996.554122

M3 - Conference article

AN - SCOPUS:0030406633

SN - 0163-1918

SP - 889

EP - 892

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

M1 - 5552565

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

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