Novel metamorphic HEMTs with highly doped InGaAs source/drain regions for high frequency applications

Kartika Chandra Sahoo; Chien I. Kuo; Yiming Li; Edward Yi Chang

doi:10.1109/TED.2010.2062521

Novel metamorphic HEMTs with highly doped InGaAs source/drain regions for high frequency applications

Kartika Chandra Sahoo, Chien I. Kuo, Yiming Li, Edward Yi Chang

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

In this paper, we report the first result of a strained In_0.52 Ga_0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In_0.4Ga_0.6As source/drain (S/D) regions. A lattice mismatch of 0.9% between In_0.52Ga_0.48 As and In_0.4Ga_0.6As S/D has resulted in a lateral strain in the In_0.52 Ga_0.48As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.

原文	English
文章編號	5560785
頁（從 - 到）	2594-2598
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	57
發行號	10
DOIs	https://doi.org/10.1109/TED.2010.2062521
出版狀態	Published - 10月 2010

存取文件

10.1109/TED.2010.2062521

其它文件與鏈接

Link to publication in Scopus

引用此

@article{84da9ea9135c49f59ffd478bb7fef541,

title = "Novel metamorphic HEMTs with highly doped InGaAs source/drain regions for high frequency applications",

abstract = "In this paper, we report the first result of a strained In0.52 Ga0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In0.4Ga0.6As source/drain (S/D) regions. A lattice mismatch of 0.9% between In0.52Ga0.48 As and In0.4Ga0.6As S/D has resulted in a lateral strain in the In0.52 Ga0.48As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.",

keywords = "DC and ac characteristics, Device simulation, HEMT, InGaAs, strained channel",

author = "Sahoo, {Kartika Chandra} and Kuo, {Chien I.} and Yiming Li and Chang, {Edward Yi}",

year = "2010",

month = oct,

doi = "10.1109/TED.2010.2062521",

language = "English",

volume = "57",

pages = "2594--2598",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "10",

}

TY - JOUR

T1 - Novel metamorphic HEMTs with highly doped InGaAs source/drain regions for high frequency applications

AU - Sahoo, Kartika Chandra

AU - Kuo, Chien I.

AU - Li, Yiming

AU - Chang, Edward Yi

PY - 2010/10

Y1 - 2010/10

N2 - In this paper, we report the first result of a strained In0.52 Ga0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In0.4Ga0.6As source/drain (S/D) regions. A lattice mismatch of 0.9% between In0.52Ga0.48 As and In0.4Ga0.6As S/D has resulted in a lateral strain in the In0.52 Ga0.48As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.

AB - In this paper, we report the first result of a strained In0.52 Ga0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In0.4Ga0.6As source/drain (S/D) regions. A lattice mismatch of 0.9% between In0.52Ga0.48 As and In0.4Ga0.6As S/D has resulted in a lateral strain in the In0.52 Ga0.48As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.

KW - DC and ac characteristics

KW - Device simulation

KW - HEMT

KW - InGaAs

KW - strained channel

UR - http://www.scopus.com/inward/record.url?scp=77956997692&partnerID=8YFLogxK

U2 - 10.1109/TED.2010.2062521

DO - 10.1109/TED.2010.2062521

M3 - Article

AN - SCOPUS:77956997692

SN - 0018-9383

VL - 57

SP - 2594

EP - 2598

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 5560785

ER -

Novel metamorphic HEMTs with highly doped InGaAs source/drain regions for high frequency applications

摘要

存取文件

其它文件與鏈接

指紋

引用此