Novel InGaZnO inverters utilizing film profile engineering

Horng-Chih Lin; Ming Hung Wu; Chin Wen Chan; Rong Jhe Lyu; Tiao Yuan Huang

doi:10.7567/JJAP.54.081102

Novel InGaZnO inverters utilizing film profile engineering

Horng-Chih Lin^*, Ming Hung Wu, Chin Wen Chan, Rong Jhe Lyu, Tiao Yuan Huang

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (V_DD) of 5V.

原文	American English
文章編號	081102
期刊	Japanese journal of applied physics
卷	54
發行號	8
DOIs	https://doi.org/10.7567/JJAP.54.081102
出版狀態	Published - 1 8月 2015

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abstract = "In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (VDD) of 5V.",

author = "Horng-Chih Lin and Wu, {Ming Hung} and Chan, {Chin Wen} and Lyu, {Rong Jhe} and Huang, {Tiao Yuan}",

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AU - Chan, Chin Wen

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AU - Huang, Tiao Yuan

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N2 - In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (VDD) of 5V.

AB - In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (VDD) of 5V.

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DO - 10.7567/JJAP.54.081102

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

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Novel InGaZnO inverters utilizing film profile engineering

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