@inproceedings{acfc03a9b71d4b2fad3697116a2411fd,
title = "Novel Guard Ring Structure formed by Self-align Trench Implant in SiC MOSFET",
abstract = "SiC is a promising wide bandgap semiconductor for high power applications due to its high breakdown electric field and thermal conductivity. However, the breakdown voltage of SiC MOSFETs needs further improvement, and the guard ring (GR) design is critical for this purpose. This paper proposes a new GR structure for SiC MOSFETs called the self-align trench implant GR, which can improve the breakdown voltage by 10% to 221S.2V while using less chip area compared to the conventional design. Furthermore, this proposed self-align designed processes to combine the trench etch and GR implant not only eliminate the need of another photomask but can be integrated into the planar and trench MOSFET process flow.",
keywords = "Guard Ring Implant, Power device, SiC, Silicon Carbide, Trench etch",
author = "Yu, {Wei Chen} and Hong, {Chia Long} and Tu, {Chang Ching} and Hsiao, {Yi Kai} and Kuo, {Hao Chung}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",
year = "2023",
doi = "10.1109/WiPDAAsia58218.2023.10261909",
language = "English",
series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
address = "美國",
}