Novel electroless copper plating as gate electrodes for a-TFTs AMLCD application

Chih Yu Su; Yi Teh Chou; Po-Tsun Liu; Hung Ming Chen

Novel electroless copper plating as gate electrodes for a-TFTs AMLCD application

Chih Yu Su, Yi Teh Chou, Po-Tsun Liu^*, Hung Ming Chen

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

A novel method for depositing low-cost and high-quality electro-less plating (ELP) copper film has been realized to fabricate copper-gate thin film transistors in this work. The electro-less NiP serves as an adhesion layer on glass substrate first and then the copper films are self-aligned on it. All processes of gate electrodes are fabricated under ambient environment. Electrical characteristics of the inverse staggered amorphous silicon thin film transistors (a-TFTs) are studied comprehensively. The threshold voltage is about 3.55V and the filed mobility is up to 0.56 at V_D=7.67V.

原文	English
出版狀態	Published - 2009
事件	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, 台灣持續時間: 27 4月 2009 → 30 4月 2009

Conference

Conference	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
國家/地區	台灣
城市	Taipei
期間	27/04/09 → 30/04/09

其它文件與鏈接

Link to publication in Scopus

引用此

@conference{22c8f8377fc640bf80b49e3303c5a1a2,

title = "Novel electroless copper plating as gate electrodes for a-TFTs AMLCD application",

abstract = "A novel method for depositing low-cost and high-quality electro-less plating (ELP) copper film has been realized to fabricate copper-gate thin film transistors in this work. The electro-less NiP serves as an adhesion layer on glass substrate first and then the copper films are self-aligned on it. All processes of gate electrodes are fabricated under ambient environment. Electrical characteristics of the inverse staggered amorphous silicon thin film transistors (a-TFTs) are studied comprehensively. The threshold voltage is about 3.55V and the filed mobility is up to 0.56 at VD=7.67V.",

author = "Su, {Chih Yu} and Chou, {Yi Teh} and Po-Tsun Liu and Chen, {Hung Ming}",

year = "2009",

language = "English",

note = "2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 ; Conference date: 27-04-2009 Through 30-04-2009",

}

TY - CONF

T1 - Novel electroless copper plating as gate electrodes for a-TFTs AMLCD application

AU - Su, Chih Yu

AU - Chou, Yi Teh

AU - Liu, Po-Tsun

AU - Chen, Hung Ming

PY - 2009

Y1 - 2009

N2 - A novel method for depositing low-cost and high-quality electro-less plating (ELP) copper film has been realized to fabricate copper-gate thin film transistors in this work. The electro-less NiP serves as an adhesion layer on glass substrate first and then the copper films are self-aligned on it. All processes of gate electrodes are fabricated under ambient environment. Electrical characteristics of the inverse staggered amorphous silicon thin film transistors (a-TFTs) are studied comprehensively. The threshold voltage is about 3.55V and the filed mobility is up to 0.56 at VD=7.67V.

AB - A novel method for depositing low-cost and high-quality electro-less plating (ELP) copper film has been realized to fabricate copper-gate thin film transistors in this work. The electro-less NiP serves as an adhesion layer on glass substrate first and then the copper films are self-aligned on it. All processes of gate electrodes are fabricated under ambient environment. Electrical characteristics of the inverse staggered amorphous silicon thin film transistors (a-TFTs) are studied comprehensively. The threshold voltage is about 3.55V and the filed mobility is up to 0.56 at VD=7.67V.

UR - http://www.scopus.com/inward/record.url?scp=79952056243&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79952056243

T2 - 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009

Y2 - 27 April 2009 through 30 April 2009

ER -

Novel electroless copper plating as gate electrodes for a-TFTs AMLCD application

摘要

Conference

其它文件與鏈接

指紋

引用此