Novel electroless copper plating as gate electrodes for a-TFTs AMLCD application

Chih Yu Su, Yi Teh Chou, Po-Tsun Liu*, Hung Ming Chen

*此作品的通信作者

研究成果: Paper同行評審

摘要

A novel method for depositing low-cost and high-quality electro-less plating (ELP) copper film has been realized to fabricate copper-gate thin film transistors in this work. The electro-less NiP serves as an adhesion layer on glass substrate first and then the copper films are self-aligned on it. All processes of gate electrodes are fabricated under ambient environment. Electrical characteristics of the inverse staggered amorphous silicon thin film transistors (a-TFTs) are studied comprehensively. The threshold voltage is about 3.55V and the filed mobility is up to 0.56 at VD=7.67V.

原文English
出版狀態Published - 2009
事件2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan
持續時間: 27 4月 200930 4月 2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
國家/地區Taiwan
城市Taipei
期間27/04/0930/04/09

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