Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell

Evans Ching Song Yang; Cheng Jye Liu; Tien-Sheng Chao; Ming Chi Liaw; Charles Ching Hsiang Hsu

doi:10.1109/VLSIT.1999.799352

Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell

Evans Ching Song Yang^*
, Cheng Jye Liu
, Tien-Sheng Chao
, Ming Chi Liaw
, Charles Ching Hsiang Hsu

^*此作品的通信作者

電子物理學系

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.

原文	English
頁（從 - 到）	85-86
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1999.799352
出版狀態	Published - 1999
事件	Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn 持續時間: 14 6月 1999 → 16 6月 1999

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10.1109/VLSIT.1999.799352

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title = "Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell",

abstract = "A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15\% conduction current enhancement due to 3-dimensional cell structure.",

author = "Yang, \{Evans Ching Song\} and Liu, \{Cheng Jye\} and Tien-Sheng Chao and Liaw, \{Ming Chi\} and Hsu, \{Charles Ching Hsiang\}",

year = "1999",

doi = "10.1109/VLSIT.1999.799352",

language = "English",

pages = "85--86",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 Symposium on VLSI Technology ; Conference date: 14-06-1999 Through 16-06-1999",

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T1 - Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell

AU - Yang, Evans Ching Song

AU - Liu, Cheng Jye

AU - Chao, Tien-Sheng

AU - Liaw, Ming Chi

AU - Hsu, Charles Ching Hsiang

PY - 1999

Y1 - 1999

N2 - A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.

AB - A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.

UR - https://www.scopus.com/pages/publications/0033280199

U2 - 10.1109/VLSIT.1999.799352

DO - 10.1109/VLSIT.1999.799352

M3 - Conference article

AN - SCOPUS:0033280199

SN - 0743-1562

SP - 85

EP - 86

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1999 Symposium on VLSI Technology

Y2 - 14 June 1999 through 16 June 1999

ER -

Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell

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