TY - JOUR
T1 - Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell
AU - Yang, Evans Ching Song
AU - Liu, Cheng Jye
AU - Chao, Tien-Sheng
AU - Liaw, Ming Chi
AU - Hsu, Charles Ching Hsiang
PY - 1999/12/1
Y1 - 1999/12/1
N2 - A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.
AB - A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.
UR - http://www.scopus.com/inward/record.url?scp=0033280199&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.1999.799352
DO - 10.1109/VLSIT.1999.799352
M3 - Conference article
AN - SCOPUS:0033280199
SN - 0743-1562
SP - 85
EP - 86
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
Y2 - 14 June 1999 through 16 June 1999
ER -