Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell

Evans Ching Song Yang*, Cheng Jye Liu, Tien-Sheng Chao, Ming Chi Liaw, Charles Ching Hsiang Hsu


研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)


A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.

頁(從 - 到)85-86
期刊Digest of Technical Papers - Symposium on VLSI Technology
出版狀態Published - 1 12月 1999
事件Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
持續時間: 14 6月 199916 6月 1999


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