Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration

Yan Pin Huang; Yu San Chien; Ruoh Ning Tzeng; Ming Shaw Shy; Teu Hua Lin; Kou Hua Chen; Chi Tsung Chiu; Jin-Chern Chiou; Ching Te Chuang; Wei Hwang; Ho Ming Tong; Kuan-Neng Chen

doi:10.1109/LED.2013.2285702

Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration

Yan Pin Huang, Yu San Chien, Ruoh Ning Tzeng, Ming Shaw Shy, Teu Hua Lin, Kou Hua Chen, Chi Tsung Chiu, Jin-Chern Chiou, Ching Te Chuang, Wei Hwang, Ho Ming Tong, Kuan-Neng Chen

電機工程學系

研究成果: Article › 同行評審

90 引文斯高帕斯（Scopus）

摘要

A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180^{\circ}{\rm C}. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.

原文	English
文章編號	6650051
頁（從 - 到）	1551-1553
頁數	3
期刊	Ieee Electron Device Letters
卷	34
發行號	12
DOIs	https://doi.org/10.1109/LED.2013.2285702
出版狀態	Published - 12月 2013

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10.1109/LED.2013.2285702

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title = "Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration",

abstract = "A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180^{\circ}{\rm C}. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.",

keywords = "3-D integration, Cu bonding, Ti passivation",

author = "Huang, {Yan Pin} and Chien, {Yu San} and Tzeng, {Ruoh Ning} and Shy, {Ming Shaw} and Lin, {Teu Hua} and Chen, {Kou Hua} and Chiu, {Chi Tsung} and Jin-Chern Chiou and Chuang, {Ching Te} and Wei Hwang and Tong, {Ho Ming} and Kuan-Neng Chen",

year = "2013",

month = dec,

doi = "10.1109/LED.2013.2285702",

language = "English",

volume = "34",

pages = "1551--1553",

journal = "Ieee Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration

AU - Huang, Yan Pin

AU - Chien, Yu San

AU - Tzeng, Ruoh Ning

AU - Shy, Ming Shaw

AU - Lin, Teu Hua

AU - Chen, Kou Hua

AU - Chiu, Chi Tsung

AU - Chiou, Jin-Chern

AU - Chuang, Ching Te

AU - Hwang, Wei

AU - Tong, Ho Ming

AU - Chen, Kuan-Neng

PY - 2013/12

Y1 - 2013/12

N2 - A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180^{\circ}{\rm C}. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.

AB - A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180^{\circ}{\rm C}. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.

KW - 3-D integration

KW - Cu bonding

KW - Ti passivation

UR - http://www.scopus.com/inward/record.url?scp=84889592827&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2285702

DO - 10.1109/LED.2013.2285702

M3 - Article

AN - SCOPUS:84889592827

SN - 0741-3106

VL - 34

SP - 1551

EP - 1553

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 12

M1 - 6650051

ER -

Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration

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