Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration

Yan Pin Huang, Yu San Chien, Ruoh Ning Tzeng, Ming Shaw Shy, Teu Hua Lin, Kou Hua Chen, Chi Tsung Chiu, Jin-Chern Chiou, Ching Te Chuang, Wei Hwang, Ho Ming Tong, Kuan-Neng Chen

研究成果: Article同行評審

64 引文 斯高帕斯(Scopus)

摘要

A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180^{\circ}{\rm C}. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.

原文English
文章編號6650051
頁(從 - 到)1551-1553
頁數3
期刊IEEE Electron Device Letters
34
發行號12
DOIs
出版狀態Published - 1 12月 2013

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