Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG)

Y. W. Xiao, E. R. Hsieh, Steve S. Chung*, T. R. Chen, S. A. Huang, T. J. Chen, Osbert Cheng

*此作品的通信作者

研究成果: Paper同行評審

6 引文 斯高帕斯(Scopus)

摘要

For the first time, we use a unique feature of S/D variation of FinFET to realize PUF (Physical unclonable function) and TRNG (True random number generator). With the scaling of transistors, S/D variation becomes significant. This provides an opportunity to use the mismatch of the S/D resistances for the design of PUF. Method has been developed to first rule out those less significant factors of variation. Then, a PUF is developed based on the dominant S/D variation. In terms of the security, this PUF exhibits ideal un-biased normal distribution of hamming distance, and narrow distribution of hamming weight in the range of 45%~55%. The unstable bit rates are also very low (1.17%) under room temperature and 3.12% under 150°C, benchmarked on a 256 bits array. Meanwhile, as a result of the defect (in the form of traps) at the drain/substrate junction, RTN behavior was observed from the current measured between drain/source and substrate, named I b -RTN. It provides us a way to implement a TRNG This TRNG passed NIST test up to 9 items. Overall, the S/D mismatch PUF and I b -RTN TRNG demonstrated great potential to meet the requirements of the IoT security application.
原文American English
頁面573-577
頁數4
DOIs
出版狀態Published - 7 12月 2019
事件 2019 IEEE International Electron Devices Meeting - Hilton San Francisco Union Square, San Francisco, CA, United States
持續時間: 7 12月 201911 12月 2019

Conference

Conference 2019 IEEE International Electron Devices Meeting
縮寫名稱IEDM
國家/地區United States
城市San Francisco, CA
期間7/12/1911/12/19

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