Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Tung Ming Pan, Tan Fu Lei, Chao Chyi Chen, Tien-Sheng Chao, Ming Chi Liaw, Wen Lu Yang, Ming Shih Tsai, C. P. Lu, W. H. Chang

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.

原文English
頁(從 - 到)338-340
頁數3
期刊IEEE Electron Device Letters
21
發行號7
DOIs
出版狀態Published - 1 7月 2000

指紋

深入研究「Novel cleaning solutions for polysilicon film post chemical mechanical polishing」主題。共同形成了獨特的指紋。

引用此