Novel chirped multilayer quantum-dot lasers

Kuo-Jui Lin*, C. Y. Chang, W. C. Tseng, C. P. Lee, K. F. Lin, R. Xuan, J. Y. Chi

*此作品的通信作者

    研究成果: Conference contribution同行評審

    8 引文 斯高帕斯(Scopus)

    摘要

    Chirped multilayer (N=10) QD lasers with 2-, 3- and 5-layer of longer-, medium-, and shorter-wavelength QD stacks, respectively, were grown in this work. Low threshold current density and high saturated modal gain were achieved in this specially designed QD structure. Empirical gain-current analysis was performed on this chirped multilayer QD structure for the first time. It was consistent with our spectral observations and provided valuable information on carrier recombination in chirped multilayer QD structure. Two novel spectral characteristics were discovered also for the first time. First, simultaneous two-wavelength lasing around threshold was observed under particular gain-loss condition at this specific multilayer structure of QD stacking numbers. Second, at cryogenic temperature, simultaneous two-wavelength lasing emissions switched from longer-wavelength lasing first to shorter-wavelength lasing first with increasing current injection. Non-uniform carrier distribution among chirped multilayer QD structure is evident at low temperature below 200 K from our analysis.

    原文English
    主出版物標題Semiconductor Lasers and Laser Dynamics III
    DOIs
    出版狀態Published - 8 5月 2008
    事件Semiconductor Lasers and Laser Dynamics III - Strasbourg, France
    持續時間: 7 4月 20089 4月 2008

    出版系列

    名字Proceedings of SPIE - The International Society for Optical Engineering
    6997
    ISSN(列印)0277-786X

    Conference

    ConferenceSemiconductor Lasers and Laser Dynamics III
    國家/地區France
    城市Strasbourg
    期間7/04/089/04/08

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