Novel bidirectional tunneling program/erase nor (binor)type flash eeprom

Evans Ching Song Yang, Cheng Jye Liu, Ming Chi Liaw*, Tien-Sheng Chao, Charles Ching Hsiang Hsu

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This paper presents a novel flash memory cell, BiNOR, suitable for fastspeed, lowpower, and highperformance application. The proposed BiNOR structure allows random access, channel FowlerNordheim (FN) tunneling program/erase in NORtype array (In the past, channel FN tunneling program/erase can only be done in NAND array). Using the designated localized Pwell structure, BiNOR realizes the hot hole free, lowpower bidirectional channel FN tunneling program and erase, and alleviates the oxide instability induced during source erase in NORtype flash memory.

原文English
頁數1
期刊IEEE Transactions on Electron Devices
46
發行號6
DOIs
出版狀態Published - 1 12月 1999

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