TY - JOUR
T1 - Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM
AU - Yang, Evans Ching Song
AU - Liu, Cheng Jye
AU - Chao, Tien-Sheng
AU - Liaw, Ming Chi
AU - Hsu, Charles Ching Hsiang
PY - 1999/1/1
Y1 - 1999/1/1
N2 - This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.
AB - This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.
UR - http://www.scopus.com/inward/record.url?scp=0032599194&partnerID=8YFLogxK
U2 - 10.1109/VTSA.1999.786036
DO - 10.1109/VTSA.1999.786036
M3 - Conference article
AN - SCOPUS:0032599194
SN - 1524-766X
SP - 207
EP - 210
JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Y2 - 7 June 1999 through 10 June 1999
ER -