Nonvolatile Si/SiO2/SiN/SiO2 Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics

Shih Ching Chen, Ting Chang Chang*, Po-Tsun Liu, Yung Chun Wu, Jing Yi Chin, Ping Hung Yeh, Li Wei Feng, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

A silicon-oxide-nitride-oxide-silicon type polycrystalline silicon thin-film transistor (poly-Si TFT) with nanowire channels was investigated for both transistor and memory applications. The poly-Si TFT memory device has superior electrical characteristics, such as higher drain current, smaller threshold voltage, and steeper subthreshold slope. Also, the simulation result on electrical field reveals that the electrical field across the tunnel oxide is enhanced and that across the blocking oxide is reduced at the corner regions. This will lead to the parasitic gate injection activity and the erasing speed can be apparently improved in the memory device due to the pronounced corner effect and narrow channel width.

原文English
文章編號193103
頁數3
期刊Applied Physics Letters
91
發行號19
DOIs
出版狀態Published - 2007

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