Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

Shih Ching Chen*, Ting Chang Chang, Po-Tsun Liu, Yung Chun Wu, Ping Hung Yeh, Chi Feng Weng, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

*此作品的通信作者

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (Vth), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature.

原文English
文章編號122111
頁數3
期刊Applied Physics Letters
90
發行號12
DOIs
出版狀態Published - 2007

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