Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

Yong Jyun Wang; Zi Liang Yang; Jia Wei Chen; Ruixue Zhu; Shang Hsien Hsieh; Sen Hao Chang; Hong Yuan Lin; Chun Liang Lin; Yi Chun Chen; Chia Hao Chen; Bo Chao Huang; Ya Ping Chiu; Chao Hui Yeh; Peng Gao; Po Wen Chiu; Yi Cheng Chen; Ying Hao Chu

doi:10.1021/acsami.4c02525

Nonvolatile Modulation of Bi₂O₂Se/Pb(Zr,Ti)O₃ Heteroepitaxy

Yong Jyun Wang, Zi Liang Yang, Jia Wei Chen, Ruixue Zhu, Shang Hsien Hsieh, Sen Hao Chang, Hong Yuan Lin, Chun Liang Lin, Yi Chun Chen, Chia Hao Chen, Bo Chao Huang, Ya Ping Chiu, Chao Hui Yeh, Peng Gao, Po Wen Chiu, Yi Cheng Chen^*, Ying Hao Chu^*

^*此作品的通信作者

研究成果: Article › 同行評審

摘要

The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi₂O₂Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe’s electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr_0.2Ti_0.8O₃ (PZT) layer to modify BOSe’s band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.

原文	English
頁（從 - 到）	27523-27531
頁數	9
期刊	ACS Applied Materials and Interfaces
卷	16
發行號	21
DOIs	https://doi.org/10.1021/acsami.4c02525
出版狀態	Published - 29 5月 2024

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10.1021/acsami.4c02525

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Wang, Y. J., Yang, Z. L., Chen, J. W., Zhu, R., Hsieh, S. H., Chang, S. H., Lin, H. Y., Lin, C. L., Chen, Y. C., Chen, C. H., Huang, B. C., Chiu, Y. P., Yeh, C. H., Gao, P., Chiu, P. W., Chen, Y. C., & Chu, Y. H. (2024). Nonvolatile Modulation of Bi₂O₂Se/Pb(Zr,Ti)O₃ Heteroepitaxy. ACS Applied Materials and Interfaces, 16(21), 27523-27531. https://doi.org/10.1021/acsami.4c02525

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title = "Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy",

abstract = "The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe{\textquoteright}s electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe{\textquoteright}s band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.",

keywords = "2D semiconductor, BiOSe, electronic potential, ferroelectric, nonvolatile modulation",

author = "Wang, {Yong Jyun} and Yang, {Zi Liang} and Chen, {Jia Wei} and Ruixue Zhu and Hsieh, {Shang Hsien} and Chang, {Sen Hao} and Lin, {Hong Yuan} and Lin, {Chun Liang} and Chen, {Yi Chun} and Chen, {Chia Hao} and Huang, {Bo Chao} and Chiu, {Ya Ping} and Yeh, {Chao Hui} and Peng Gao and Chiu, {Po Wen} and Chen, {Yi Cheng} and Chu, {Ying Hao}",

note = "Publisher Copyright: {\textcopyright} 2024 The Authors. Published by American Chemical Society.",

year = "2024",

month = may,

day = "29",

doi = "10.1021/acsami.4c02525",

language = "English",

volume = "16",

pages = "27523--27531",

journal = "ACS Applied Materials and Interfaces",

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T1 - Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

AU - Wang, Yong Jyun

AU - Yang, Zi Liang

AU - Chen, Jia Wei

AU - Zhu, Ruixue

AU - Hsieh, Shang Hsien

AU - Chang, Sen Hao

AU - Lin, Hong Yuan

AU - Lin, Chun Liang

AU - Chen, Yi Chun

AU - Chen, Chia Hao

AU - Huang, Bo Chao

AU - Chiu, Ya Ping

AU - Yeh, Chao Hui

AU - Gao, Peng

AU - Chiu, Po Wen

AU - Chen, Yi Cheng

AU - Chu, Ying Hao

PY - 2024/5/29

Y1 - 2024/5/29

N2 - The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe’s electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe’s band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.

AB - The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe’s electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe’s band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.

KW - 2D semiconductor

KW - BiOSe

KW - electronic potential

KW - ferroelectric

KW - nonvolatile modulation

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DO - 10.1021/acsami.4c02525

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AN - SCOPUS:85193686514

SN - 1944-8244

VL - 16

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EP - 27531

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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ER -

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

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Nonvolatile Modulation of Bi₂O₂Se/Pb(Zr,Ti)O₃ Heteroepitaxy