摘要
Metal-oxide-semiconductor structures with NiSi 2 and CoSi 2 nanocrystals embedded in the SiO 2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO 2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.
原文 | English |
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頁(從 - 到) | 339-343 |
頁數 | 5 |
期刊 | Journal of Nanoscience and Nanotechnology |
卷 | 7 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 1 1月 2007 |