Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals

P. H. Yeh, L. J. Chen, Po-Tsun Liu, D. Y. Wang, T. C. Chang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Metal-oxide-semiconductor structures with NiSi 2 and CoSi 2 nanocrystals embedded in the SiO 2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO 2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

原文English
頁(從 - 到)339-343
頁數5
期刊Journal of Nanoscience and Nanotechnology
7
發行號1
DOIs
出版狀態Published - 1 1月 2007

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