Silicon nanocrystal-embedded memories were fabricated by using the thermal agglomeration of an ultrathin (1.5-1.8nm) amorphous silicon (a-Si) film. The a-Si was deposited on a 4-nm tunnel-oxide layer by electron beam evaporation and subsequently annealed in situ at 850°C for 5 min. Hemispherical Si nanocrystals were self-assembled, and nonvolatile memories were fabricated after depositing a 17-nm control-oxide layer. A threshold voltage window of 0.9 V was achieved under write/erase (W/E) voltages of ±10 V, and good endurance characteristics up to 104 cycles were exhibited. Increasing W/E voltages created a large memory window (>2.7V), and the retention characteristics showed little temperature dependence up to 85°C.
|頁（從 - 到）||6586-6588|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 9 十月 2007|