摘要
Silicon nanocrystal-embedded memories were fabricated by using the thermal agglomeration of an ultrathin (1.5-1.8nm) amorphous silicon (a-Si) film. The a-Si was deposited on a 4-nm tunnel-oxide layer by electron beam evaporation and subsequently annealed in situ at 850°C for 5 min. Hemispherical Si nanocrystals were self-assembled, and nonvolatile memories were fabricated after depositing a 17-nm control-oxide layer. A threshold voltage window of 0.9 V was achieved under write/erase (W/E) voltages of ±10 V, and good endurance characteristics up to 104 cycles were exhibited. Increasing W/E voltages created a large memory window (>2.7V), and the retention characteristics showed little temperature dependence up to 85°C.
原文 | English |
---|---|
頁(從 - 到) | 6586-6588 |
頁數 | 3 |
期刊 | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
卷 | 46 |
發行號 | 10 A |
DOIs | |
出版狀態 | Published - 9 10月 2007 |