Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Wei Ren Chen*, Ting Chang Chang, Po-Tsun Liu, Jui Lung Yeh, Chun Hao Tu, Jen Chung Lou, Ching Fa Yeh, Chun Yen Chang

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

原文English
文章編號082103
頁數3
期刊Applied Physics Letters
91
發行號8
DOIs
出版狀態Published - 2007

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