摘要
The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.
原文 | English |
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文章編號 | 082103 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 91 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 2007 |