摘要
Nonvolatile memory devices with oxide-nitride-oxide stack structures were fabricated on glass substrates using low-temperature polycrystalline silicon technology. The Fowler-Nordheim tunneling scheme is more suitable than channel hot carrier injection for the programming of the polycrystalline silicon nonvolatile memory device. A memory window of 1.5 V can be obtained at a programming voltage of 20 V. After 104 programming/erasing cycles, a threshold voltage shift of 1.5 V is maintained. Furthermore, the proposed memory device exhibits good retention for 50 h at 60 °C without a significant decline in the memory window.
原文 | English |
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文章編號 | 182115 |
期刊 | Applied Physics Letters |
卷 | 90 |
發行號 | 18 |
DOIs | |
出版狀態 | Published - 10 5月 2007 |