Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

C. W. Chen; S. C. Hung; C. H. Lee; C. J. Tun; Cheng-Huang Kuo; M. D. Yang; C. W. Yeh; C. H. Wu; G. C. Chi

doi:10.1364/OME.1.001555

Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

C. W. Chen, S. C. Hung^*, C. H. Lee, C. J. Tun, Cheng-Huang Kuo, M. D. Yang, C. W. Yeh, C. H. Wu, G. C. Chi

^*此作品的通信作者

光電學院

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO₂(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V_f) of 6V with a series resistance of 2.2 × 10₅ Ω.

原文	English
頁（從 - 到）	1555-1560
頁數	6
期刊	Optical Materials Express
卷	1
發行號	8
DOIs	https://doi.org/10.1364/OME.1.001555
出版狀態	Published - 1 12月 2011

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title = "Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure",

abstract = "Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.",

author = "Chen, {C. W.} and Hung, {S. C.} and Lee, {C. H.} and Tun, {C. J.} and Cheng-Huang Kuo and Yang, {M. D.} and Yeh, {C. W.} and Wu, {C. H.} and Chi, {G. C.}",

year = "2011",

month = dec,

day = "1",

doi = "10.1364/OME.1.001555",

language = "English",

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journal = "Optical Materials Express",

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TY - JOUR

T1 - Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

AU - Chen, C. W.

AU - Hung, S. C.

AU - Lee, C. H.

AU - Tun, C. J.

AU - Kuo, Cheng-Huang

AU - Yang, M. D.

AU - Yeh, C. W.

AU - Wu, C. H.

AU - Chi, G. C.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.

AB - Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.

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U2 - 10.1364/OME.1.001555

DO - 10.1364/OME.1.001555

M3 - Article

AN - SCOPUS:84862202412

SN - 2159-3930

VL - 1

SP - 1555

EP - 1560

JO - Optical Materials Express

JF - Optical Materials Express

IS - 8

ER -

Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

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